By Muhannad S Bakir, Professor James D Meindl
ISBN-10: 1596932465
ISBN-13: 9781596932463
ISBN-10: 1596932473
ISBN-13: 9781596932470
Latest microchips have approximately reached their functionality limits. quite a few warmth removing, strength supply, chip reliability, and input/output (I/O) signaling difficulties stand within the approach of next-generation 3D gigascale, system-on-a-chip expertise, and this state-of-the-art advisor describes the newest breakthroughs in microfluidics, high-density compliant electric interconnects, and nanophotonics which are converging to resolve them. Engineers get complete info on cutting-edge I/O interconnects and packaging, besides the most recent advances and purposes in energy supply layout, research, and modeling. The publication explores interconnect buildings, fabrics, and programs for reaching high-bandwidth off-chip electric verbal exchange. It brings readers in control with the newest warmth removing applied sciences together with chip-scale microchannel cooling, built-in micropumps and fluidic channels, and carbon nanotube interconnects.
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Additional info for Integrated Interconnect Technologies for 3D Nanoelectronic Systems
Example text
1 (see Chapter 11). It is clear that the size of the heat sink has been increasing with each new microprocessor, thus imposing limits on system size, chip packing efficiency, and interconnect length between chips. While the minimum feature size of a silicon transistor has been decreasing, the thermal I/O (heat sink) has scaled in the opposite direction in order to attain smaller junction-to-ambient thermal resistance (Rja). 2°C/W [24]. 03 m/s; no heat sink was needed for the Intel 386 microprocessor to operate at the needed chip junction temperature because of the small power dissipation [32].
The role of β is often considered secondary compared to that of α and sometimes ignored for simplicity. 1 Channel Cracking A tensile stress in an elastic film can cause cohesive fracture by channel cracking. Unlike a freestanding sheet, fracture of the film bonded to a substrate is constrained. 11 [23, 41]. 12(b) shows the cross section in the wake of a channel crack [42]. 7) where σ f is the tensile stress in the film, hf is the film thickness, and the dimensionless coefficient Z depends on the elastic mismatch between the film and the substrate.
9) thin-film structure. The measured interface toughness in general exhibits a trend to increase as the phase angle increases. It is understood that the shearing mode promotes inelastic deformation in the constituent materials and near-tip interface contact/sliding, both contributing to the energy dissipation during the crack growth [31]. The measurements of interface fracture toughness provide a tool for materials selection and process control in the microelectronics industry. One typically measures the fracture toughness for specific interfaces under various process conditions, then selects the material and condition that gives an adequate toughness.
Integrated Interconnect Technologies for 3D Nanoelectronic Systems by Muhannad S Bakir, Professor James D Meindl
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